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Infineon has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter SiC power semiconductor fab. Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production.
In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20% better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions.
Infineon's new radiation-hardened 1 and 2 Mb parallel interface ferroelectric-RAM nonvolatile memory devices feature unsurpassed reliability and endurance, with up to 120 years of data retention at 85-degree Celsius, along with random access and full memory write at bus speeds.
Infineon announces two new generations of high voltage and medium voltage CoolGaN TM devices, which now enable customers to use GaN in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization.
Infineon Technologies AG announced the XENSIV™ Sensor Shield for Arduino, a versatile tool designed for evaluating smart sensor systems in smart home and diverse consumer applications.
Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability, even under demanding high voltage and switching frequency conditions.
Infineon Technologies AG introduces the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
Infineon Technologies AG launched its TDM2254xD series dual-phase power modules that enable best-in-class power density, quality, and total cost of ownership for AI data centers.
